MCP87055
High-Speed N-Channel Power MOSFET
Features Description Low Drain-to-Source On Resistance (RDS(ON) Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD) Low Series Gate Resistance (RG) Fast Switching Capable of Short Dead-Time Operation ROHS Compliant The MCP87055 device is an N-Channel power
MOSFET in a popular PDFN 3.3 mm x 3.3 mm
package. Advanced packaging and silicon processing
technologies allow the MCP87055 to achieve a low QG
for a given RDS(on) value, resulting in a low Figure of
Merit (FOM). Combined with low RG, the low Figure of
Merit of the MCP87055 allows high-efficiency power
conversion with reduced switching and conduction
losses. Applications Point-of-Load DC-DC Converters High Efficiency Power Management in Servers,
Networking, and Automotive Applications Package Type
PDFN 3.3 x 3.3 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Product Summary Table: Unless otherwise indicated, TA = +25ЛљC
Parameters Sym Min Typ Max Units Conditions Drain-to-Source Breakdown Voltage BVDSS 25 — — V VGS = 0V, ID = 250 µA Gate-to-Source Threshold Voltage VGS(TH) 1.1 1.35 1.7 V VDS = VGS, ID = 250 µA Drain-to-Source On Resistance RDS(ON) — 5.7 7 mΩ VGS = 4.5V, ID = 20A — 4.7 6 mΩ VGS = 10V, ID = 20A Operating Characteristics Total Gate Charge QG — 11 14 nC VDS = 12.5V, ID = 20A, VGS = 4.5V Gate-to-Drain Charge QGD — 4.5 — nC VDS = 12.5V, ID = 20A RG — 2.1 — Ω Thermal Resistance Junction-to-X RθJX — — 66 ˚C/W Note 1 Thermal Resistance Junction-to-Case RθJC — — 3.4 ˚C/W Note 2 Series Gate Resistance
Thermal Characteristics Note 1: 2: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
RОёJC is determined using JEDEC 51-14 Method. This characteristic is determined by design. пѓЈ 2012 Microchip Technology Inc. DS22323B-page 1 MCP87055
1.0 ELECTRICAL
CHARACTERISTICS †Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions
above those indicated in the operational sections of this
specification is not intended. Exposure to maximum …
