DATASHEET
HCTS20MS FN3051
Rev 1.00
September 1995 Radiation Hardened Dual 4-Input NAND Gate Features Pinouts 3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm2/mg
Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
Dose Rate Survivability: >1 x 1012 RAD (Si)/s
Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55oC to +125oC
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
LSTTL Input Compatibility
-VIL = 0.8V Max
-VIH = VCC/2 Min
Input Current Levels Ii п‚Ј 5пЃA at VOL, VOH Description
The Intersil HCTS20MS is a Radiation Hardened Dual 4Input NAND Gate. A low on any input forces the output to a
High state.
The HCTS20MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family. …
