TK1K9A60F
MOSFETs Silicon N-Channel MOS (ПЂ-MOSоЂґ) TK1K9A60F
1. Applications Switching Power Supplies 2. Features
(1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit 1: Gate
2: Drain
3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 оЂЊ unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation Rating Unit VDSS 600 V VGSS В±30 (Note 1) ID 3.7 (Note 1) IDP 14.8 PD 30 W EAS 101 mJ IAS 3.7 A (Tc = 25 оЂЊ) Single-pulse avalanche energy Symbol (Note 2) Single-pulse avalanche current
Reverse drain current (DC) (Note 1) IDR 3.7 Reverse drain current (pulsed) (Note 1) IDRP 14.8 A Channel temperature Tch 150 Storage temperature Tstg -55 to 150 VISO(RMS) 2000 V TOR 0.6 NоЂЌm Isolation voltage (RMS) (t = 1.0 s) Mounting torque Note: оЂЊ Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). Start of commercial production
В©2017
Toshiba Electronic Devices & Storage Corporation 1 2018-01
2017-11-28
Rev.2.0 TK1K9A60F …
