FDMS86500L
N-Channel PowerTrench® MOSFET
60 V, 158 A, 2.5 mΩ
Features General Description Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 25 A This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on), fast switching
speed and body diode reverse recovery performance. Max rDS(on) = 3.7 mΩ at VGS = 4.5 V, ID = 20 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced
engineered for soft recovery body diode technology, MSL1 robust package design Applications 100% UIL tested Primary Switch in Isolated DC-DC RoHS Compliant Synchronous Rectifier
Load Switch Bottom Top Pin 1 Pin 1 S D D D S S G S D S D S D G D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage
Drain Current -Continuous ID TC = 25 °C TJ, TSTG ±20 V (Note 5) 158 -Continuous TC = 100 °C (Note 5) 100 TA = 25 °C (Note 1a) 25 -Pulsed PD Units
V -Continuous
Single Pulse Avalanche Energy EAS Ratings
60 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C (Note 4) 799 (Note 3) 240
104 (Note 1a) Operating and Storage Junction Temperature Range 2.5
-55 to +150 A mJ
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