Datasheet Infineon IFX007T

High Current PN Half Bridge with
Integrated Driver
IFX007T
Industrial & Multi Purpose NovalithIC™ 1 Overview Quality Requirement Category: Industrial Features
• Path resistance of max. 12.8 mΩ @ 25°C (typ. 10.0 mΩ @ 25°C)
High side: max. 6.5 mΩ @ 25°C (typ. 5.3 mΩ @ 25°C)
Low side: max. 6.3 mΩ @ 25°C (typ. 4.7 mΩ @ 25°C) • Enhanced switching speed for reduced switching losses • Capable for high PWM frequency combined with active freewheeling • Switched mode current limitation for reduced power dissipation in overcurrent • Current limitation level of 55 A min. • Status flag diagnosis with current sense capability • Overtemperature shutdown with latch behavior • Undervoltage shutdown • Driver circuit with logic level inputs • Adjustable slew rates for optimized EMI • Operation up to 40 V • Green Product (RoHS compliant) • JESD47I Qualified Description
The IFX007T is an integrated high current half bridge for motor drive applications. It is part of the Industrial &
Multi Purpose NovalithIC™ family containing one p-channel high-side MOSFET and one n-channel low-side
MOSFET with an integrated driver IC in one package. Due to the p-channel high-side switch the need for a
charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the
integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead
time generation and protection against overtemperature, undervoltage, overcurrent and short circuit.
The IFX007T provides a cost optimized solution for protected high current PWM motor drives with very low
board space consumption. Data Sheet www.infineon.com 1 Rev. 1.0
2018-09-11 High Current PN Half Bridge with Integrated Driver
IFX007T
Overview Type Package Marking IFX007T PG-TO263-7-1 IFX007T Data Sheet 2 Rev. 1.0
2018-09-11 High Current PN Half Bridge with Integrated Driver
IFX007T Table of Contents
1 Overview 1 2
2.1
2.2 Block diagram . 4 …