PDF, 283 Kb, Language: en, Revision: C, File published: Mar 21, 2011, Pages: 9
Power MOSFET
Extract from the document
IRF820, SiHF820
Vishay Siliconix Power MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements Qgd (nC)
Configuration Single DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry. TO-220AB G D COMPLIANT • Compliant to RoHS Directive 2002/95/EC
D G Available RoHS* S
S
N-Channel MOSFET ORDERING INFORMATION
Package TO-220AB
IRF820PbF
SiHF820-E3
IRF820
SiHF820 Lead (Pb)-free
SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
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