STL42P6LLF6
P-channel -60 V, 23 mΩ typ., -42 A STripFET™ F6
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet -production data Features
Order code VDS RDS(on) max. ID STL42P6LLF6 -60 V 26 mΩ -42 A Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss Applications
Figure 1: Internal schematic diagram Switching applications Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages. Table 1: Device summary
Order code Marking Package Packaging STL42P6LLF6 42P6LLF6 PowerFLAT™ 5x6 Tape and reel November 2016 DocID025457 Rev 4 This is information on a product in full production. 1/16
www.st.com Contents STL42P6LLF6 Contents
1 Electrical ratings . 3 2 Electrical characteristics . 4
2.1 Electrical characteristics (curves) . 6 3 Test circuits . 9 4 Package mechanical data . 10 5 2/16 4.1 PowerFLAT™ 5x6 type R package information . 11 4.2 PowerFLAT™ 5x6 packing information . 13 Revision history . 15 DocID025457 Rev 4 STL42P6LLF6 1 Electrical ratings Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit VDS Drain-source voltage -60 V VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C -42 A ID(1) Drain current (continuous) at TC = 100 °C -30 A Drain current (pulsed) -168 A ID(1)(3) …
