RFP12N10L
October 2013 Data Sheet N-Channel Logic Level Power MOSFET
100 V, 12 A, 200 mΩ Features
• 12A, 100V These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching and
solenoid drivers. This performance is accomplished
through a special gate oxide design which provides full
rated conduction at gate biases in the 3V to 5V range,
thereby facilitating true on-off power control directly from
logic circuit supply voltages. • rDS(ON) = 0.200Ω
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds Formerly developmental type TA09526. • Linear Transfer Characteristics Ordering Information • High Input Impedance PART NUMBER
RFP12N10L PACKAGE
TO-220AB BRAND
F12N10L • Majority Carrier Device
• Related Literature
-TB334 “Guidelines for Soldering Surface Mount …
