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PNP Darlington Transistor
Extract from the document
MPSA63 / MMBTA63 / PZTA63
PNP Darlington Transistor
Features
• This device is designed for applications requiring extremely high current gain at currents to 800 mA.
• Sourced from Process 61. MMBTA63 MPSA63 PZTA63
C C E E
TO-92 SOT-23 SOT-223 B Mark:2U EBC C
B Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol Parameter Value Units VCES Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -30 V VEBO Emitter-Base Voltage -10 V Collector Current -Continuous -1.2 A -55 to +150 °C IC
TJ, Tstg Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations. Thermal Characteristics
Symbol Ta = 25°C unless otherwise noted Max. Parameter MPSA63 *MMBTA63 **PZTA63 Total Device Dissipation
Derate above 25°C 625
5.0 350
2.8 1,000
8.0 RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 357 125 PD Units
mW
mW/°C
°C/W
°C/W * Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06".
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