Datasheet Inchange Semiconductor IRF541

isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF541 FEATURES Low RDS(on) VGS Rated at ±20V Silicon Gate for Fast Switching Speed Rugged Low Drive Requirements DESCRITION Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous VALUE UNIT 80 V ±20 V ID Drain Current-Continuous 28 A IDM Drain Current-Single Plused 110 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature -55~175 ℃ Storage Temperature -55~175 ℃ MAX UNIT Tstg THERMAL CHARACTERISTICS
SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website：www.iscsemi.cn
PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF541 ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL V(BR)DSS PARAMETER CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 80 VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 RDS(on) Drain-Source On-Resistance IGSS MAX UNIT V 4 V VGS= 10V; ID= 17A 0.077 Ω Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 80V; VGS=0 250 uA VSD Forward On-Voltage IS= 27A; VGS=0 2.5 V Ciss Input Capacitance 1600 pF Coss Output Capacitance 800 pF Crss Reverse Transfer Capacitance 300 pF TYP MAX UNIT 15 23 ns 70 110 ns 40 60 ns 50 75 ns VDS=25V,VGS=0V,
F=1.0MHz SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
Td(on)
Tr
Td(off)
Tf PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time VDD=50V,ID=28A
VGS=10V,RGEN=9.1Ω
RGS=9.1Ω Fall Time isc website：www.iscsemi.cn
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