PDF, 179 Kb, Language: en, File uploaded: Jul 2, 2019, Pages: 9
Power MOSFET
Extract from the document
IRF9510S, SiHF9510S
Vishay Siliconix Power MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) -100 RDS(on) () VGS = -10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single
S DESCRIPTION D2PAK (TO-263)
G G D
D S • Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
…
