MMBT2222A / PZT2222A
NPN General-Purpose Amplifier
Features
• This device is for use as a medium power amplifier and
switch requiring collector currents up to 500mA.
• Sourced from process 19. C C E E SOT-23
Mark:1P C SOT-223 B Figure 1. MMBT2222A Device Package B Figure 2. PZT2222A Device Package Ordering Information
Part Number Top Mark Package Packing Method MMBT2222A 1P SOT-23 3L Tape and Reel PZT2222A 2222A SOT-223 4L Tape and Reel Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V Collector Current 1.0 A -55 to 150 °C IC
TSTG Parameter Operating and Storage Junction Temperature Range Note:
1. These rating are based on a maximum junction temperature of 150 °C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operation. © 2004 Fairchild Semiconductor Corporation
MMBT2222A / PZT2222A Rev. 1.1.0 www.fairchildsemi.com MMBT2222A / PZT2222A — NPN General-Purpose Amplifier July 2014 Values are at TA = 25°C unless otherwise noted. Symbol
PD
RθJA Max. Parameter Unit MMBT2222A(3) PZT2222A(4) Total Device Dissipation 350 1000 mW Derate Above 25°C 2.8 8.0 mW/°C Thermal Resistance, Junction to Ambient 357 125 °C/W Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2. © 2004 Fairchild Semiconductor Corporation
MMBT2222A / PZT2222A Rev. 1.1.0 www.fairchildsemi.com
2 MMBT2222A / PZT2222A — NPN General-Purpose Amplifier Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics
BV(BR)CEO Collector-Emitter Breakdown
Voltage(5) IC = 10 mA, IB = 0 40 V BV(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 75 V BV(BR)EBO 6.0 Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 ICEX Collector Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V ICBO Collector Cut-Off Current IEBO
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