Features
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• 3 Switching and Amplifier Applications
Suitable for Automatic Insertion in Thick and Thin-film Circuits
Low Noise: BC850
Complement to BC856, BC857, BC858, BC859, and BC860 2
1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information(1)
Part Number Marking Package Packing Method BC846AMTF 8AA SOT-23 3L Tape and Reel BC846BMTF 8AB SOT-23 3L Tape and Reel BC846CMTF 8AC SOT-23 3L Tape and Reel BC847AMTF 8BA SOT-23 3L Tape and Reel BC847BMTF 8BB SOT-23 3L Tape and Reel BC847CMTF 8BC SOT-23 3L Tape and Reel BC848BMTF 8CB SOT-23 3L Tape and Reel BC848CMTF 8CC SOT-23 3L Tape and Reel BC850AMTF 8EA SOT-23 3L Tape and Reel BC850CMTF 8EC SOT-23 3L Tape and Reel Note:
1. Affix "-A,-B,-C" means hFE classification. Affix "-M" means SOT-23 package. Affix "-TF" means the tape and reel type
packing. © 2002 Semiconductor Components Industries, LLC.
September-2017, Rev. 2 1 Publication Order Number:
BC846/D BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor BC846 / BC847 / BC848 / BC850
NPN Epitaxial Silicon Transistor Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol
VCBO VCEO Parameter
Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) TJ Junction Temperature TSTG Value
BC846 80 BC847 / BC850 50 BC848 30 BC846 65 BC847 / BC850 45 BC848 30 BC846 / BC847 6 BC848 / BC850 5 Unit
V V V 100 mA 150 °C -65 to +150 °C Value Unit Power Dissipation 310 mW Derate Above 25°C 2.48 mW/°C Thermal Resistance, Junction-to-Ambient 403 °C/W Storage Temperature Range Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted. Symbol
PD
RθJA Parameter Note:
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