Datasheet Toshiba XPN12006NC

XPN12006NC
MOSFETs Silicon N-channel MOS (U-MOS-H) XPN12006NC
1. Applications
• Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features
(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 9.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain TSON Advance(WF) Start of commercial production
©2019-2020
Toshiba Electronic Devices & Storage Corporation 1 2019-12
2020-06-24
Rev.4.0 XPN12006NC
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Symbol Rating Unit
V Drain-source voltage VDSS 60 Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 20 Drain current (pulsed) (Note 1) IDP 60 Power dissipation (Tc = 25 ) Power dissipation (t = 10 s) (Note 2) PD Power dissipation (t = 10 s) (Note 3) Single-pulse avalanche energy A 65 W 2.27
0.84 (Note 4) EAS
IAS 20 A Channel temperature (Note 5) Tch 175 Storage temperature (Note 5) Tstg -55 to 175 Single-pulse avalanche current Note: 41 mJ Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). 5. Thermal Characteristics
Characteristics …