FDS6890A FDS6890A
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description Features These N-Channel 2.5V specified MOSFETs are
produced using ON Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance. • 7.5 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V. • Low gate charge (23nC typical). • Fast switching speed. Applications • • DC/DC converter
• Motor drives High performance trench technology for extremely
low RDS(ON). • High power and current handling capability. D2
D1 D2 D1 pin 1 SO-8 G1 S2 G2 4 6 3 7 2 8 1 S1 Absolute Maximum Ratings
Symbol 5 T A=25 oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter 20 V V GSS Gate-Source Voltage ±8 V ID Drain Current 7.5 A -Continuous (Note 1a) -Pulsed
PD 20 Power Dissipation for Dual Operation 2.0 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) T J, T stg Operating and Storage Junction Temperature Range W 0.9
-55 to +150 °C Thermal Characteristics
R θJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W R θJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W 90 Package Marking and Ordering Information
Device Marking Device Reel Size Tape W idth Quantity FDS6890A FDS6890A 13 12mm 2500 units 1999 Semiconductor Components Industries, LLC.
October-2017, Rev. 3 Publication Order Number:
FDS6890A/D Symbol TA = 25 C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS
∆TJ
IDSS Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C IGSSF Gate-Body Leakage Current,
Forward …
