Datasheet STMicroelectronics MASTERGAN2TR
| Manufacturer | STMicroelectronics |
| Series | MASTERGAN2 |
| Part Number | MASTERGAN2TR |
High power density 600V Half bridge driver with two enhancement mode GaN HEMT
Datasheets
High power density 600V Half bridge driver with two enhancement mode GaN HEMT
Prices
Detailed Description
The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.
The integrated power GaNs have 650 V drain‑source breakdown voltage and RDS(ON) of 150 mΩ and 225 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The MASTERGAN2 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.
The MASTERGAN2 operates in the industrial temperature range, -40°C to 125°C.
The device is available in a compact 9x9 mm QFN package.
Status
| Lifecycle Status | Active (Recommended for new designs) |
Packaging
| Package | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
Model Line
- MASTERGAN2 MASTERGAN2TR
Manufacturer's Classification
- Power Management > Gate Drivers > High Voltage Half Bridge Gate Drivers
