Datasheet ON Semiconductor NVH4L015N065SC1
| Manufacturer | ON Semiconductor |
| Series | NVH4L015N065SC1 |
| Part Number | NVH4L015N065SC1 |
Silicon Carbide MOSFET, N‐Channel, 650V, 12 mΩ, TO247−4L
Datasheets
Datasheet NVH4L015N065SC1
PDF, 372 Kb, Language: en, Revision: 2, File uploaded: Feb 24, 2021, Pages: 8
MOSFET -SiC Power, Single N-Channel, TO247-4L 650 V, 12 mW, 142 A
MOSFET -SiC Power, Single N-Channel, TO247-4L 650 V, 12 mW, 142 A
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Detailed Description
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.
In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Status
| Lifecycle Status | Active (Recommended for new designs) |
Packaging
| Package | TO-247-4 |
| Package Code | 340CJ |
Eco Plan
| Compliance | AEC Qualified | PPAP Capable | Pb-free | Halide free |
Manufacturer's Classification
- Wide Bandgap > Silicon Carbide (SiC) MOSFETs
