Datasheet Analog Devices HMC-AUH312

FEATURES FUNCTIONAL BLOCK DIAGRAM Small signal gain: >8 dB
80 GHz distributed amplifier
Configurable with or without bias tees for VDD and VGG1 bias
Low power dissipation
300 mW with bias tee at VDD = 5 V
360 mW without bias tee at VDD = 6 V
480 mW without bias tee at VDD = 8 V
Die size: 1.2 mm × 1.0 mm × 0.1 mm 2 VGG1 1 RFIN/VGG1 HMC-AUH312 RFOUT/
VDD VGG2 VDD APPLICATIONS 5 Fiber optic modulator drivers
Fiber optic photoreceiver postamplifiers
Low noise amplifier for test and measurement equipment
Point to point and point to multipoint radios
Wideband communication and surveillance systems
Radar warning receivers 4 3 13476-001 Data Sheet 0.5 GHz to 80 GHz, GaAs, HEMT, MMIC,
Low Noise Wideband Amplifier
HMC-AUH312 Figure 1. GENERAL DESCRIPTION
The HMC-AUH312 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), HEMT, low noise,
wideband amplifier die that operates between 500 MHz and
80 GHz, providing a typical 3 dB bandwidth of 80 GHz. The
amplifier provides 10 dB of small signal gain and a maximum
output amplitude of 2.5 V p-p, which makes it ideal for use in
broadband wireless, fiber optic communications, and test …