Datasheet Analog Devices HMC-ALH382-DIE

HMC-ALH382
v03.1210 Amplifiers -low noise -Chip 1 GaAs HEMT LOW NOISE
AMPLIFIER, 57 -65 GHz Typical Applications Features This HMC-ALH382 is ideal for: Noise Figure: 3.8 dB • Short Haul / High Capacity Links P1dB: +12 dBm • Wireless LANs Gain: 21 dB • Military & Space Supply Voltage: +2.5V
50 Ohm Matched Input/Output
Die Size: 1.55 x 0.73 x 0.1 mm General Description Functional Diagram The HMC-ALH382 is a high dynamic range, four
stage GaAs HEMT MMIC Low Noise Amplifier
(LNA) which operates between 57 and 65 GHz. The
HMC-ALH382 features 21 dB of small signal gain,
4 dB of noise figure and an output power of +12
dBm at 1dB compression from a +2.5V supply
voltage. All bond pads and the die backside are Ti/
Au metallized and the amplifier device is fully
passivated for reliable operation. This versatile LNA
is compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes. Electrical Specifications, TA = +25° C, Vdd = 2.5V, Idd = 64 mA*
Parameter Min. Frequency Range
Gain Typ. Max. 57 -65
19 Units
GHz 21 dB Noise Figure 4 5.5 Input Return Loss 12 dB Output Return Loss 10 dB Output Power for 1 dB Compression (P1dB) 12 dBm Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.) 64 dB 100 mA *Unless otherwise indicated, all measurements are from probed die …