Datasheet STMicroelectronics STD30NF06LAG

STD30NF06LAG
Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A
STripFET™ II Power MOSFET in a DPAK package
Datasheet -production data Features Figure 1: Internal schematic diagram Order code VDS RDS(on) max. ID STD30NF06LAG 60 V 0.028 Ω 35 A AEC-Q101 qualified
Low threshold drive
Gate charge minimized Applications Switching applications Description D(2, TAB) This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
is specifically designed to minimize input
capacitance and gate charge. It is therefore ideal
as a primary switch in advanced high-efficiency
isolated DC-DC converters for Telecom and
Computer applications. It is also suitable for any
application with low gate charge drive
requirements. G(1) S(3) AM01475v1_noZen Table 1: Device summary
Order code Marking Package Packing STD30NF06LAG D30NF06L DPAK Tape and reel February 2017 DocID029664 Rev 2 This is information on a product in full production. 1/15
www.st.com Contents STD30NF06LAG Contents
1 Electrical ratings . 3 2 Electrical characteristics . 4
2.1 Electrical characteristics (curves) . 6 3 Test circuits . 8 4 Package information . 9 5 2/15 4.1 DPAK (TO-252) type A package information. 9 4.2 DPAK (TO-252) packing information . 12 Revision history . 14 DocID029664 Rev 2 STD30NF06LAG 1 Electrical ratings Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V VDGR Drain-gate voltage (RGS = 20 kΩ) 60 V ID Drain current (continuous) at Tcase = 25 °C 35 ID Drain current (continuous) at Tcase = 100 °C 25 IDM(1) Drain current (pulsed) 140 A PTOT Total dissipation at Tcase = 25 °C 70 W Peak diode recovery voltage slope 25 V/ns -55 to 175 °C Value Unit dv/dt (2) Tstg
Tj Storage temperature range
Operating junction temperature range A Notes:
(1) Pulse width is limited by safe operating area. (2) ISD ≤ 35 A, di/dt ≤ 400 A/μs, VDS(peak) ≤ V(BR)DSS Table 3: Thermal data …