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P-Channel 8-V (D-S) 175C MOSFET
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SUP/SUB15P01-52
Vishay Siliconix P-Channel 8-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A) 0.052 @ VGS = –4.5 V –15 –8 0.070 @ VGS = –2.5 V –10 0.105 @ VGS = –1.8 V –10.5 S TO-220AB TO-263
G DRAIN connected to TAB
G D S Top View
G D S D
SUB15P01-52 Top View P-Channel MOSFET
SUP15P01-52 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Symbol Limit Drain-Source Voltage Parameter VDS –8 Gate-Source Voltage VGS "8 TC = 25_C Continuous Drain Current
(TJ = 175_C) TC = 125_C Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Power Dissipation L = 0.1 mH
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)c Operating Junction and Storage Temperature Range Unit
V –15
ID –8.7 IDM –25 IAR –10 EAR A 5 mJ 25d
PD W 2.1 TJ, Tstg _C –55 to 175 THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum RthJA 58 70 Junction-to-Case RthJC 5 6 Junction-to-Lead RthJL 16 20 Junction-to-Ambient PCB Mount (TO-263)c Unit _C/W
C/W Notes:
a. Package limited.
b. Duty cycle v 1%. …
