MMBT3640
PNP Switching Amplifier
Description C This device is designed for very high-speed saturated
switching at collector currents to 100 mA. Sourced
from process 65. E
SOT-23
Mark: 2J B Ordering Information
Part Number Marking Package Packing Method MMBT3640 2J SOT-23 3L Tape and Reel Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage -12 V VCBO Collector-Base Voltage -12 V VEBO Emitter-Base Voltage -4 V -200 mA -55 to +150 °C IC
TJ , TSTG Parameter Collector Current -Continuous
Junction and Storage Temperature Range Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations. Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted. Symbol
PD
RθJA Parameter Max. Unit 225 mW Derate Above TA = 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient 556 °C/W Total Device Dissipation Note:
3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. © 2001 Fairchild Semiconductor Corporation
MMBT3640 Rev. 1.1.0 www.fairchildsemi.com
1 MMBT3640 — PNP Switching Amplifier March 2014 Values are at TA = 25°C unless otherwise noted. Symbol Parameter V(BR)CEO Collector-Emitter Breakdown
Voltage(4) Conditions
IC = -10 mA, IB = 0 Min. Max. Unit -12 V V(BR)CES Collector-Emitter Breakdown Voltage IC = -100 μA, VBE = 0 -12 V V(BR)CBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -12 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -100 μA, IC = 0 -4.0 V ICES …
