TEMIC
2N7075 Siliconix N-Channel Enhancement-Mode Thansistor
Product Summary
Vns(V) rnS(on) (Q) In (A) 100 0.065 30 TO 254AA D Hermetic Package o
Go-J
Case Isolated S D S G
Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 ID 24 I Tc= lOO'C Pulsed Drain Current
I T c=25'C
ITc = 100'C
Operating Junction and Storage Thmperature Range
Lead Temperature eh6" from case for 10 sec.) A 120 IDM Maximum Power Dissipation V 30 I Tc = 25'C
Continuous Drain Current (TJ = 150'C) Unit 150 Po W 60 TJ. Tstg -55 to 150 TL 300 'C Thermal Resistance Ratings
Parameter Symbol 'JYpical Maximum Maximum Junction-to-Ambient RthJA 50 Maximum Junction-ta-Case RthJC 0.83 Case-ta-Sink RthCS P-36736-Rev. C (05/30/94) Unit 'c/w 0.2 6 173 TEMIC
2N7075 Siliconix Specifications (TJ -25°C Unless Otherwise Noted)
Limit
Parameter Symbol Test Condition Min V(BR)DSS = OY, ID = 250 JlA
= 250 ~A
VDS = OY,Vas = ±20V
Vns = 80 Y, Vas -OV
Vns = 80 Y, Vas = 0 Y, T] = 125 C
Vns = 5Y,Vas = 10V
Vas = 10 Y, In = 24 A …
