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SPDT High Power UltraCMOS 10 MHz–3.0 GHz RF Switch
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Product Specification PE4259
SPDT High Power UltraCMOS®
10 MHz–3.0 GHz RF Switch Product Description
The PE4259 UltraCMOS® RF switch is designed to
cover a broad range of applications from 10 MHz
through 3000 MHz. This reflective switch integrates
on-board CMOS control logic with a low voltage
CMOS-compatible control interface, and can be
controlled using either single-pin or complementary
control inputs. Using a nominal +3-volt power supply
voltage, a typical input 1dB compression point of
+33.5 dBm can be achieved. Features
Single-pin or complementary CMOS logic control inputs
Low insertion loss:
0.35 dB @ 1000 MHz
0.5 dB @ 2000 MHz
Isolation of 30 dB @ 1000 MHz
High ESD tolerance of 2 kV HBM The PE4259 is manufactured on pSemi’s
UltraCMOS process, a patented variation of siliconon-insulator (SOI) technology on a sapphire
substrate, offering the performance of GaAs with the
economy and integration of conventional CMOS. Typical input 1 dB compression point of +33.5 dBm
1.8V minimum power supply voltage
Ultra-small SC-70 package Figure 2. Package Type SC-70 …
