Datasheet SGP10N60 - Infineon IGBT, TO-220

Detailed Description

Manufacturer: Infineon

Description: IGBT, TO-220

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Docket:
Preliminary data
SGP10N60, SGB10N60, SGW10N60
Fast S-IGBT in NPT-Technology · 75 % lower Eoff compared to previous generation · Short circuit withstand time 10 µs · Designed for moderate and high frequency applications:
- SMPS and PFC up to 150 kHz - Inverter, Motor controls · NPT-Technology for 600V applications offers: - tighter parameter distribution - higher ruggedness, temperature stable behaviour - parallel switching capability combined with low conduction losses
Type SGP10N60 SGB10N60 SGW10N60

Specifications:

• Transistor Type: IGBT
• Max Voltage Vce Sat: 2.5 V
• Collector-to-Emitter Breakdown Voltage: 600 V
• Transistor Case Style: TO-220
• Number of Pins: 3
• Case Style: TO-220
• Current Temperature: 25°C
• Fall Time Tf: 65 ns
• Full Power Rating Temperature: 25°C
• Max Current Ic Continuous a: 10 A
• Max Power Dissipation Ptot: 104 W
• Power Dissipation: 125 W
• Power Dissipation Pd: 104 W
• Pulsed Current Icm: 50 A
• Rise Time: 25 ns
• Transistor Polarity: N

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5
• Multicomp - MK3306