Datasheet HGTG20N60A4D - Fairchild IGBT, TO-247

Fairchild HGTG20N60A4D

Part Number: HGTG20N60A4D

Detailed Description

Manufacturer: Fairchild

Description: IGBT, TO-247

Docket:
HGTG20N60A4D, HGT4E20N60A4DS
Data Sheet APRIL 2002
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. These IGBT's are ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. These devices have been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49341.
Features

Specifications:

Transistor Type: IGBT
DC Collector Current: 70 A
Collector Emitter Voltage Vces: 2.7 V
Power Dissipation Max: 290 W
Collector Emitter Voltage V(br)ceo: 600 V
Operating Temperature Range: -55°C to +150°C
Transistor Case Style: TO-247
Number of Pins: 3
SVHC: No SVHC (18-Jun-2010)
Alternate Case Style: SOT-249
Current Ic Continuous a Max: 70 A
Current Temperature: 25°C
Device Marking: HGTG20N60A4D
Fall Time Typ: 32 ns
Fall Time tf: 32 ns
Full Power Rating Temperature: 25°C
Number of Transistors: 1
Package / Case: TO-247
Power Dissipation: 290 W
Power Dissipation Pd: 290 W
Pulsed Current Icm: 280 A
Rise Time: 12 ns
SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
Termination Type: Through Hole
Transistor Polarity: N
Voltage Vces: 600 V

RoHS: Yes

Accessories:

Fischer Elektronik - WLK 5