Datasheet IRG4PSC71KPBF - International Rectifier IGBT, 600 V, 85 A, TO-274A A

Detailed Description

Manufacturer: International Rectifier

Description: IGBT, 600 V, 85 A, TO-274A A

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Docket:
PD - 91683B
IRG4PSC71K
INSULATED GATE BIPOLAR TRANSISTOR
C
Short Circuit Rated UltraFast IGBT

Simulation Model

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 85 A
• Max Voltage Vce Sat: 2.3 V
• Max Power Dissipation: 350 W
• Collector-to-Emitter Breakdown Voltage: 600 V
• Transistor Case Style: Super-247
• Number of Pins: 3
• Case Style: Super-247
• Current Temperature: 25°C
• Fall Time Tf: 133 ns
• Full Power Rating Temperature: 25°C
• Max Current Ic Continuous a: 85 A
• Max Fall Time: 133 ns
• Min Short Circuit Withstand Time: 10Вµs
• Number of Transistors: 1
• Power Dissipation: 350 W
• Power Dissipation Pd: 350 W
• Pulsed Current Icm: 200 A
• Rise Time: 54 ns
• Termination Type: Through Hole
• Transistor Polarity: N
• Voltage Vces: 600 V

RoHS: Yes