Datasheet GT15J321 - Toshiba IGBT, 600 V, TO-220NIS

Detailed Description

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-220NIS

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Docket:
GT15J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J321
High Power Switching Applications Fast Switching Applications
· · · · · · The 4th generation FS (fast switching) Enhancement-mode High speed: tf = 0.03 µs (typ.) Low saturation Voltage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector.

Unit: mm

Specifications:

• Transistor Type: IGBT
• Max Voltage Vce Sat: 2.45 V
• Collector-to-Emitter Breakdown Voltage: 600 V
• Transistor Case Style: TO-220NIS
• Case Style: TO-220NIS
• Junction to Case Thermal Resistance A: 4.16°C/W
• Max Current Ic Continuous a: 15 A
• Max Fall Time: 150 ns
• Max Junction Temperature Tj: 150°C
• Power Dissipation: 30 W
• Power Dissipation Pd: 30 W
• Pulsed Current Icm: 30 A
• Rise Time: 40 ns
• Termination Type: Through Hole
• Transistor Polarity: N
• Typ Fall Time: 30 ns
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLPG 02