Datasheet GT30J301 - Toshiba IGBT, 600 V, TO-3P(N)

Detailed Description

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-3P(N)

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Docket:
GT30J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J301
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
The 3rd Generation Enhancement-Mode High Speed Low Saturation Voltage : tf = 0.30µs (Max.) : VCE (sat) = 2.7V (Max.) Unit: mm

Specifications:

• Transistor Type: HP SW IGBT
• Max Voltage Vce Sat: 2.7 V
• Collector-to-Emitter Breakdown Voltage: 600 V
• Transistor Case Style: TO-3P (N)
• Number of Pins: 3
• Case Style: TO-3P (N)
• Max Current Ic Continuous a: 30 A
• Pin Format: GCE
• Power Dissipation: 155 W
• Power Dissipation Pd: 155 W
• Pulsed Current Icm: 60 A
• Rise Time: 120 ns
• Termination Type: Through Hole
• Transistor Polarity: N
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - TF 3 2
• Fischer Elektronik - WLK 5