Datasheet IRG4BC20KD-SPBF - International Rectifier IGBT, D2-PAK

Detailed Description

Manufacturer: International Rectifier

Description: IGBT, D2-PAK

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Docket:
PD -95677
IRG4BC20KD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT
RECOVERY DIODE Features
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard D2Pak package Lead-Free

Specifications:

• Transistor Type: IGBT
• Max Voltage Vce Sat: 2.8 V
• Collector-to-Emitter Breakdown Voltage: 600 V
• Transistor Case Style: D2-PAK
• Number of Pins: 3
• Av Current Ic: 16 A
• Av Current If: 7.0 A
• Case Style: D2-PAK
• Current Ic @ Vce Sat: 9.0 A
• Current Temperature: 25°C
• Full Power Rating Temperature: 25°C
• Junction to Case Thermal Resistance A: 2.1°C/W
• Max Current Ic Continuous a: 16 A
• Max Current Ifs: 32 A
• Max Junction Temperature Tj: 150°C
• Min Junction Temperature, Tj: 55°C
• Min Short Circuit Withstand Time: 10Вµs
• Number of Transistors: 1
• Power Dissipation: 60 W
• Power Dissipation Pd: 60 W
• Pulsed Current Icm: 32 A
• Rise Time: 37 ns
• SMD Marking: IRG4BC20KDS
• Termination Type: SMD
• Transistor Polarity: N
• Typ Fall Time: 160 ns
• Typ Reverse Recovery Time, trr: 37 ns
• Voltage Vces: 600 V
• Weight: 0.002kg

RoHS: Y-Ex

Accessories:

• Fischer Elektronik - WLK 5
• Fischer Elektronik - WLPG 02

Other Names:

IRG4BC20KDSPBF, IRG4BC20KD SPBF