Datasheet HGTG5N120BND - Fairchild IGBT, 1200 V, 21 A

Fairchild HGTG5N120BND

Part Number: HGTG5N120BND

Detailed Description

Manufacturer: Fairchild

Description: IGBT, 1200 V, 21 A

Docket:
HGTG5N120BND, HGTP5N120BND
Data Sheet May 2003
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
The HGTG5N120BND and HGTP5N120BND are NonPunch Through (NPT) IGBT designs.

They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49306.
Features

Specifications:

Transistor Type: NPT
DC Collector Current: 21 A
Collector Emitter Voltage Vces: 2.7 V
Power Dissipation Max: 167 W
Collector Emitter Voltage V(br)ceo: 1.2kV
Operating Temperature Range: -55В°C to +150В°C
Transistor Case Style: TO-247
Number of Pins: 3
SVHC: No SVHC (18-Jun-2010)
Max Current Ic Continuous a: 21 A
Package / Case: TO-247
Power Dissipation: 167 W
Termination Type: Through Hole
Transistor Polarity: N
Voltage Vces: 1200 V

RoHS: Yes

Accessories:

Fischer Elektronik - WLK 5