Datasheet NTE3320 - NTE Electronics SINGLE IGBT, 600 V, 50 A

Detailed Description

Manufacturer: NTE Electronics

Description: SINGLE IGBT, 600 V, 50 A

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Docket:
NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
Features: D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCES .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate-Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Collector Current, IC DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . .

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 50 A
• Collector Emitter Voltage, Vces: 600 V
• Power Dissipation, Pd: 200 W
• Collector Emitter Voltage, V(br)ceo: 600 V
• Number of Pins: 3

RoHS: Yes