Datasheet STGW39NC60VD - STMicroelectronics IGBT, TO-247

Detailed Description

Manufacturer: STMicroelectronics

Description: IGBT, TO-247

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Docket:
STGW39NC60VD
40 A - 600 V - very fast IGBT
Features
Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode
3

Simulation Model

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 80 A
• Collector Emitter Voltage Vces: 2.5 V
• Power Dissipation Max: 250 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: TO-247
• Current Ic Continuous a Max: 70 A
• Package / Case: TO-247
• Power Dissipation: 250 W
• Power Dissipation Pd: 250 W
• Pulsed Current Icm: 220 A
• Rise Time: 13 ns
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5
• Fischer Elektronik - WLPG 02