Datasheet STGY50NC60WD - STMicroelectronics IGBT, N 600 V 19 A MAX247

Detailed Description

Manufacturer: STMicroelectronics

Description: IGBT, N 600 V 19 A MAX247

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Docket:
STGY50NC60WD
50 A, 600 V, ultra fast IGBT
Features
Very high frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode
2 3

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 110 A
• Collector Emitter Voltage Vces: 2.5 V
• Power Dissipation Max: 278 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: Max-247
• Current Ic Continuous a Max: 65 A
• Package / Case: Max-247
• Power Dissipation: 260 W
• Power Dissipation Pd: 260 W
• Pulsed Current Icm: 250 A
• Rise Time: 17 ns
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes