Datasheet Infineon IGB110S101XTMA1
| Manufacturer | Infineon |
| Series | IGB110S101 |
| Part Number | IGB110S101XTMA1 |
The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs.
Datasheets
Datasheet IGB110S101
PDF, 1.2 Mb, Language: en, Revision: 01_00, File uploaded: Apr 23, 2025, Pages: 18
The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs
The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs
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Detailed Description
Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
Status
| Lifecycle Status | Active (Recommended for new designs) |
Model Line
Series: IGB110S101 (1)
- IGB110S101XTMA1
Manufacturer's Classification
- Power > Gallium nitride (GaN) > GaN transistors
