Datasheet NGD15N41CLT4G - ON Semiconductor IGBT, N CH, 15 A, 410 V, DPAK

Detailed Description

Manufacturer: ON Semiconductor

Description: IGBT, N CH, 15 A, 410 V, DPAK

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Docket:
NGD15N41CL, NGB15N41CL, NGP15N41CL
Preferred Device
Ignition IGBT 15 Amps, 410 Volts
N-Channel DPAK, D2PAK and TO-220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications.

Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 410 V
• Collector Emitter Voltage Vces: 410 V
• DC Collector Current: 15 A
• Number of Pins: 3
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Max: 107 W
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: D-PAK
• Transistor Type: IGBT

RoHS: Yes