Datasheet SGW30N60 - Infineon IGBT, FAST

Infineon SGW30N60

Part Number: SGW30N60

Detailed Description

Manufacturer: Infineon

Description: IGBT, FAST

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Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 41 A
  • Collector Emitter Voltage Vces: 2.4 V
  • Power Dissipation Max: 250 W
  • Collector Emitter Voltage V(br)ceo: 600 V
  • Operating Temperature Range: -55°C to +150°C
  • Transistor Case Style: TO-247AC
  • Number of Pins: 3
  • Current Ic @ Vce Sat: 30 A
  • Current Ic Continuous a Max: 41 A
  • Current Temperature: 25°C
  • Device Marking: SGW30N60
  • Fall Time tf: 70 ns
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Package / Case: TO-247AC
  • Power Dissipation: 250 W
  • Power Dissipation Pd: 250 W
  • Power Dissipation Ptot Max: 250 W
  • Pulsed Current Icm: 112 A
  • Rise Time: 35 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N
  • Voltage Vces: 600 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - WLK 5