Datasheet SKW20N60 - Infineon IGBT, FAST

Detailed Description

Manufacturer: Infineon

Description: IGBT, FAST

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Docket:
SKW20N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
· 75% lower Eoff compared to previous generation combined with low conduction losses · Short circuit withstand time ­ 10 µs · Designed for: - Motor controls - Inverter · NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability · Very soft, fast recovery anti-parallel EmCon diode
C
G

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 40 A
• Collector Emitter Voltage Vces: 2.4 V
• Power Dissipation Max: 179 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Transistor Case Style: TO-247
• Number of Pins: 3
• Current Ic @ Vce Sat: 20 A
• Current Ic Continuous a Max: 40 A
• Current Temperature: 25В°C
• Device Marking: SKW20N60
• Fall Time tf: 65 ns
• Full Power Rating Temperature: 25В°C
• Junction Temperature Tj Max: 150В°C
• Junction Temperature Tj Min: -55В°C
• Lead Spacing: 2.54 mm
• Number of Transistors: 1
• Package / Case: TO-247
• Pin Format: 1 g, 2C, 3E
• Power Dissipation: 179 W
• Power Dissipation Pd: 179 W
• Power Dissipation Ptot Max: 179 W
• Pulsed Current Icm: 80 A
• Rise Time: 36 ns
• Termination Type: Through Hole
• Transistor Polarity: N
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5