Datasheet STGE200NB60S - STMicroelectronics IGBT, SOT-227

Detailed Description

Manufacturer: STMicroelectronics

Description: IGBT, SOT-227

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Docket:
STGE200NB60S
N-channel 150A - 600V - ISOTOP Low drop PowerMESHTM IGBT
General features
TYPE VCES VCE(sat) (typ.) 1.2V 1.3V IC 150A 200A TC 100°C 25°C
STGE200NB60S 600V

Specifications:

• Transistor Type: IGBT Module
• DC Collector Current: 200 A
• Collector Emitter Voltage Vces: 1.2 V
• Power Dissipation Max: 600 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: ISOTOP
• Current Ic Continuous a Max: 150 A
• Package / Case: ISOTOP
• Power Dissipation: 600 W
• Power Dissipation Pd: 600 W
• Pulsed Current Icm: 400 A
• Rise Time: 112 ns
• Termination Type: Screw
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Nettlefolds - MB04040010007FA
• SCHRODER - 13459