Datasheet IRGB8B60KPBF - International Rectifier IGBT, 600 V, 17 A, TO-220

Detailed Description

Manufacturer: International Rectifier

Description: IGBT, 600 V, 17 A, TO-220

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Docket:
PD - 94545C
INSULATED GATE BIPOLAR TRANSISTOR
Features
· · · · Low VCE (on) Non Punch Through IGBT Technology.

10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
C

Simulation Model

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 28 A
• Collector Emitter Voltage Vces: 2.2 V
• Power Dissipation Max: 167 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Transistor Case Style: TO-220AB
• Number of Pins: 3
• Current Ic Continuous a Max: 28 A
• Fall Time Max: 56 ns
• Fall Time tf: 56 ns
• Package / Case: TO-220AB
• Power Dissipation: 167 W
• Power Dissipation Pd: 167 W
• Power Dissipation Ptot Max: 167 W
• Pulsed Current Icm: 56 A
• Rise Time: 21 ns
• SMD Marking: IRGB8B60K
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5