Datasheet IRGP30B120KD-EP - International Rectifier IGBT, N CH, 1200 V, 60 A, TO-247AD

Detailed Description

Manufacturer: International Rectifier

Description: IGBT, N CH, 1200 V, 60 A, TO-247AD

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Docket:
PD- 93818A
IRGP30B120KD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
· Low VCE(on) Non Punch Through (NPT) Technology · Low Diode VF (1.76V Typical @ 25A & 25°C) · 10 s Short Circuit Capability · Square RBSOA · Ultrasoft Diode Recovery Characteristics · Positive VCE(on) Temperature Coefficient · Extended Lead TO-247AD Package

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 1.2 kV
• DC Collector Current: 60 A
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-247AD
• Power Dissipation Max: 300 W
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: TO-247AD
• Transistor Type: IGBT

RoHS: Yes

Other Names:

IRGP30B120KDEP, IRGP30B120KD EP