Datasheet IRG4PC50UDPBF - International Rectifier IGBT, TO-247

Detailed Description

Manufacturer: International Rectifier

Description: IGBT, TO-247

Download Data Sheet

Docket:
PD -95185
IRG4PC50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
· UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode · Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 · IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations · Industry standard TO-247AC package · Lead-Free

Simulation Model

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 55 A
• Collector Emitter Voltage Vces: 2 V
• Power Dissipation Max: 200 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Transistor Case Style: TO-247
• Number of Pins: 3
• Current Ic Continuous a Max: 55 A
• Current Temperature: 25°C
• Fall Time Max: 110 ns
• Full Power Rating Temperature: 25°C
• Number of Transistors: 1
• Package / Case: TO-247
• Power Dissipation: 200 W
• Power Dissipation Pd: 200 W
• Pulsed Current Icm: 220 A
• Rise Time: 25 ns
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes