Datasheet IKP20N60T - Infineon IGBT, N, 600 V, 20 A, TO-220

Detailed Description

Manufacturer: Infineon

Description: IGBT, N, 600 V, 20 A, TO-220

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Docket:
IKP20N60T
TrenchStop
Series
IKW20N60T
Power Semiconductors

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 40 A
• Collector Emitter Voltage Vces: 2.05 V
• Power Dissipation Max: 166 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -40°C to +175°C
• Transistor Case Style: TO-220
• Current Ic Continuous a Max: 20 A
• Current Ic Continuous b Max: 20 A
• Fall Time tf: 42 ns
• Number of Transistors: 1
• Package / Case: TO-220
• Power Dissipation: 166 W
• Power Dissipation Pd: 166 W
• Pulsed Current Icm: 60 A
• Rise Time: 14 ns
• Short Circuit Withstand Time Min: 5Вµs
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5