Datasheet 1MBI400S-120 - Fuji Electric IGBT MODULE, 1200 V, 400 A

Detailed Description

Manufacturer: Fuji Electric

Description: IGBT MODULE, 1200 V, 400 A

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Docket:
1MBI400S-120
1200V / 400A 1 in one-package
Features
· High speed switching · Voltage drive · Low inductance module structure
IGBT Module

Specifications:

• Transistor Type: IGBT Module
• DC Collector Current: 600 A
• Collector Emitter Voltage Vces: 2.6 V
• Power Dissipation Max: 3.1kW
• Collector Emitter Voltage V(br)ceo: 1200 V
• Transistor Case Style: M127
• Current Ic @ Vce Sat: 400 A
• Current Ic Continuous a Max: 600 A
• Current Temperature: 25°C
• External Depth: 62 mm
• External Length / Height: 35 mm
• External Width: 108 mm
• Fall Time tf: 300 ns
• Full Power Rating Temperature: 25°C
• Isolation voltage: 2500 V
• Junction Temperature Tj Max: 150°C
• Number of Transistors: 1
• Package / Case: M127
• Power Dissipation: 3100 W
• Power Dissipation Pd: 3100 W
• Pulsed Current Icm: 1200 A
• Rise Time: 600 ns
• Termination Type: Screw
• Transistor Polarity: N Channel
• Voltage Vces: 1200 V
• Weight: 0.4kg

RoHS: Yes

Other Names:

1MBI400S120, 1MBI400S 120