Datasheet GT15Q102 - Toshiba IGBT, 1200 V, TO-3P(N)

Toshiba GT15Q102

Part Number: GT15Q102

Detailed Description

Manufacturer: Toshiba

Description: IGBT, 1200 V, TO-3P(N)

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Docket:
GT15Q102
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15Q102
High Power Switching Applications

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 15 A
  • Collector Emitter Voltage Vces: 2.7 V
  • Power Dissipation Max: 170 W
  • Collector Emitter Voltage V(br)ceo: 1200 V
  • Operating Temperature Range: -55°C to +150°C
  • Transistor Case Style: TO-3P (N)
  • Number of Pins: 3
  • Current Ic Continuous a Max: 15 A
  • Package / Case: TO-3P (N)
  • Pin Format: GCE
  • Power Dissipation: 170 W
  • Power Dissipation Pd: 170 W
  • Pulsed Current Icm: 30 A
  • Rise Time: 50 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N Channel
  • Voltage Vces: 1200 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - TF 3 2
  • Fischer Elektronik - WLK 5