Datasheet IKU04N60R - Infineon IGBT+ DIODE,600V,4A,TO251

Detailed Description

Manufacturer: Infineon

Description: IGBT+ DIODE,600V,4A,TO251

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Specifications:

• Transistor Type: IGBT
• DC Collector Current: 4 A
• Collector Emitter Voltage Vces: 2.1 V
• Power Dissipation Max: 75 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -40°C to +175°C
• Transistor Case Style: TO-251
• Number of Pins: 3

RoHS: Yes