Datasheet IKW03N120H2 - Infineon IGBT+ DIODE,1200V,3A,TO247

Detailed Description

Manufacturer: Infineon

Description: IGBT+ DIODE,1200V,3A,TO247

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Docket:
IKP03N120H2 IKW03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
·
Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A Qualified according to JEDEC2 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V 1200V IC 3A 3A Eoff 0.15mJ 0.15mJ Tj 150°C 150°C Marking K03H1202 K03H1202 Package PG-TO-247-3 PG-TO-220-3-1

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 3 A
• Collector Emitter Voltage Vces: 2.8 V
• Power Dissipation Max: 62.5 W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C to +150°C
• Transistor Case Style: TO-247
• Number of Pins: 3

RoHS: Yes

Accessories:

• Fischer Elektronik - THFU 2