Datasheet IRG4BC30UPBF - International Rectifier IGBT, 600 V, 23 A, TO-220

Detailed Description

Manufacturer: International Rectifier

Description: IGBT, 600 V, 23 A, TO-220

Download Data Sheet

Docket:
PD - 95169A
IRG4BC30UPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 600 V
• Collector Emitter Voltage Vces: 2.5 V
• Current Ic Continuous a Max: 23 A
• Current Temperature: 25°C
• DC Collector Current: 23 A
• Fall Time Max: 97 ns
• Full Power Rating Temperature: 25°C
• Number of Pins: 3
• Number of Transistors: 1
• Package / Case: TO-220
• Power Dissipation Max: 100 W
• Power Dissipation Pd: 100 W
• Power Dissipation: 100 W
• Pulsed Current Icm: 92 A
• Rise Time: 9.6 ns
• Termination Type: Through Hole
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 600 V

RoHS: Yes