Datasheet VS-GB50NA120UX - Vishay TRANSISTOR, IGBT, 1200 V, 50 A, SOT227

Detailed Description

Manufacturer: Vishay

Description: TRANSISTOR, IGBT, 1200 V, 50 A, SOT227

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Docket:
GB50NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227 (Ultrafast IGBT), 50 A
FEATURES
· NPT Generation V IGBT technology · Square RBSOA · HEXFRED® clamping diode · Positive VCE(on) temperature coefficient · Fully isolated package

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2kV
• Collector Emitter Voltage Vces: 3.22 V
• DC Collector Current: 84 A
• Number of Pins: 4
• Operating Temperature Range: -40В°C to +150В°C
• Power Dissipation Max: 431 W
• Transistor Case Style: SOT-227
• Transistor Type: IGBT

RoHS: Yes

Accessories:

• Electrolube - HTS35SL

Other Names:

VSGB50NA120UX, VS GB50NA120UX