Datasheet 2MBI75S-120 - Fuji Electric IGBT MODULE, 1200 V, 75 A

Detailed Description

Manufacturer: Fuji Electric

Description: IGBT MODULE, 1200 V, 75 A

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Docket:
2MBI 75S-120
IGBT MODULE ( S-Series ) I Features
· NPT-Technology · Square SC SOA at 10 x IC · High Short Circuit Withstand-Capability · Small Temperature Dependence of the Turn-Off Switching Loss · Low Losses And Soft Switching
2-Pack IGBT 1200V 2x75A
I Outline Drawing

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2kV
• Collector Emitter Voltage Vces: 2.6 V
• Current Ic @ Vce Sat: 75 A
• Current Ic Continuous a Max: 100 A
• Current Temperature: 25°C
• DC Collector Current: 100 A
• External Depth: 34 mm
• External Length / Height: 30 mm
• External Width: 92 mm
• Fall Time tf: 300 ns
• Full Power Rating Temperature: 25°C
• Isolation Voltage: 2.5kV
• Junction Temperature Tj Max: 150°C
• Module Configuration: Dual
• Mounting Type: Screw
• Number of Pins: 7
• Number of Transistors: 2
• Package / Case: M232
• Power Dissipation Max: 600 W
• Power Dissipation Pd: 600 W
• Power Dissipation: 600 W
• Pulsed Current Icm: 200 A
• Rise Time: 600 ns
• Transistor Case Style: Module
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 1.2kV
• Weight: 0.18kg

RoHS: Yes

Other Names:

2MBI75S120, 2MBI75S 120